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A: I got the solution from the original author of the library, I just need to provide the options: ObjectMapper mapper = new ObjectMapper().setSerializationInclusion(JsonInclude.Include.ALWAYS); 1. Field of the Invention The present invention relates to a curable composition for resist pattern formation used in microfabrication of semiconductors. 2. Description of the Related Art The current trend in the manufacture of semiconductor devices is toward increasing the integration density of the integrated circuit, thus increasing the size of the chip area per integrated circuit. Such size increase places increasing demands on the technology required for printing fine patterns, particularly fine lines on a substrate, in order to manufacture semiconductor integrated circuits. In lithography for the manufacture of integrated circuits, a number of steps are involved. A semiconductor wafer undergoes coating with a resist, exposure, and development. The exposed semiconductor wafer undergoes a heat treatment (post exposure bake) after exposure, and then undergoes developing and etching. This process of coating, exposure, heating, developing, and etching is called a developing process. In recent years, as the design rule is made finer, the light source used for exposure becomes shorter in wavelength. The g-ray (436 nm) has been used as the light source. In the near future, KrF excimer lasers (248 nm) will be used as the light source. With finer design rules and shorter wavelengths of light sources, high resolution is required for resists. Use of a chemical amplification resist which shows high sensitivity, high resolution, and favorable dry etching resistance has been studied. As the alkali developer usable for a chemically amplified resist, aqueous alkali solutions are primarily used. However, the chemically amplified resist requires high resolution and high sensitivity. 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